NTD110N02R-001
MOSFET N-CH 24V 12.5A/110A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD110N02R-001 is an N-Channel Power MOSFET designed for efficient power switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 24 V and offers a continuous drain current capability of 12.5 A at ambient temperature and 110 A at case temperature. The device exhibits a low on-resistance of 4.6 mOhm at 20 A and 10 V, with a gate drive range from 4.5 V to 10 V. Key parameters include a maximum gate charge (Qg) of 28 nC at 4.5 V and input capacitance (Ciss) of 3440 pF at 20 V. Power dissipation is rated at 1.5 W (Ta) and 110 W (Tc). The IPAK package (TO-251-3 Short Leads) is suitable for various industrial and automotive applications requiring robust power handling. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
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