NTC080N120SC1
SIC MOS WAFER SALES 80MOHM 1200VManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTC080N120SC1 is a 1200V N-Channel Silicon Carbide (SiC) MOSFET die designed for high-performance power applications. Featuring a low on-resistance of 110mOhm (Max) at 20A and 20V Vgs, this device offers efficient switching characteristics. Its high breakdown voltage of 1200V and continuous drain current capability of 31A (Tc) make it suitable for demanding power conversion circuits. The NTC080N120SC1 exhibits a maximum power dissipation of 178W (Tc) and a gate charge of 56 nC (Max) at 20V. With a wide operating temperature range of -55°C to 175°C (TJ), this die is engineered for reliability. Applications include electric vehicle charging, industrial power supplies, and renewable energy systems. The component is packaged as a die in trays.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1112 pF @ 800 V |
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