NTC020N120SC1
SIC MOS WAFER SALES 20MOHM 1200VManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTC020N120SC1 is an N-Channel Silicon Carbide (SiC) FET designed for high-voltage applications. This surface mount die offers a Drain to Source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 103 A at 25°C (Tc), with a maximum power dissipation of 535 W (Tc). The device exhibits a low on-resistance (Rds On) of 28 mOhm at 60 A and 20 V. Key parameters include a gate charge (Qg) of 203 nC at 20 V and input capacitance (Ciss) of 2890 pF at 800 V. It operates within an extended temperature range of -55°C to 175°C (TJ). This component is suitable for demanding power conversion applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 60A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 535W (Tc) |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 203 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 800 V |
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