NTBV45N06T4G
MOSFET N-CH 60V 45A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTBV45N06T4G is a N-Channel Power MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain current (Id) of 45A at 25°C (Ta). Key electrical characteristics include a maximum On-Resistance (Rds On) of 26mOhm at 22.5A and 10V, and a typical Gate Charge (Qg) of 46 nC at 10 V. The input capacitance (Ciss) is specified at a maximum of 1725 pF at 25 V. The NTBV45N06T4G features a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, supplied on tape and reel. This MOSFET technology is suitable for use in automotive, industrial, and power supply applications requiring high-efficiency switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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