NTBS2D7N06M7
MOSFET N-CH 60V 110A D2PAK-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTBS2D7N06M7 is an N-Channel Power MOSFET designed for high-performance applications. This TO-263 (D2PAK) packaged device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 110A at 25°C (Tc). With a low on-resistance (Rds On) of 2.7mOhm at 80A and 10V, it offers efficient power switching. The device boasts a maximum power dissipation of 176W (Tj) and a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 6655 pF at 30V. This MOSFET is suitable for use in demanding power management systems across various industrial sectors including automotive, computing, and telecommunications. The component is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6655 pF @ 30 V |
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