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NTBLS0D7N06C

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NTBLS0D7N06C

MOSFET N-CH 60V 54A/470A 8HPSOF

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTBLS0D7N06C is an N-Channel Power MOSFET designed for high-performance switching applications. Featuring a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 54A at 25°C ambient and 470A pulsed at 25°C case, this component offers excellent power handling. Its low on-resistance of 0.75mOhm at 80A and 10V gate drive highlights its efficiency. The device supports gate drive voltages from 6V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 4V. With a maximum junction temperature of 175°C, it is suitable for demanding environments. Key electrical characteristics include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 13730 pF at 30V. The NTBLS0D7N06C is packaged in an 8-HPSOF (8-PowerSFN) surface mount configuration, supplied on tape and reel. This MOSFET finds application in power supply units, automotive systems, and industrial power control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C54A (Ta), 470A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)4.2W (Ta), 314W (Tc)
Vgs(th) (Max) @ Id4V @ 661µA
Supplier Device Package8-HPSOF
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13730 pF @ 30 V

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