NTBGS3D5N06C
POWER MOSFET, 60 V, 3.7 M?, 127AManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTBGS3D5N06C is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low on-resistance of 3.7 mOhm at 24A and 12V Vgs, enabling minimal conduction losses. With a drain-source voltage (Vdss) of 60V, it supports demanding power requirements. The continuous drain current is rated at 22A at ambient temperature (Ta) and 127A at case temperature (Tc), with a maximum power dissipation of 115W (Tc). Key parameters include a gate charge (Qg) of 39 nC at 10V and input capacitance (Ciss) of 2430 pF at 30V. The NTBGS3D5N06C is housed in a surface-mount D2PAK-7 package (TO-263-7), suitable for automated assembly. This component is utilized in automotive, industrial power supplies, and consumer electronics where robust power management is critical. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 127A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 24A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 122µA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 30 V |
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