NTBGS2D5N06C
POWER MOSFET, 60 V, 2.5 M?, 224Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTBGS2D5N06C is an N-Channel Power MOSFET designed for high-efficiency power switching applications. Featuring a Drain to Source Voltage (Vdss) of 60 V and a low on-resistance (Rds On) of 2.5 mOhm at 35A and 12V Vgs, this component facilitates reduced conduction losses. Continuous drain current capabilities are rated at 27A at ambient temperature (Ta) and 169A at case temperature (Tc), with associated power dissipation of 3.7W (Ta) and 136W (Tc). The device is housed in a TO-263 (D2PAK) package, suitable for surface mounting, and operates within a temperature range of -55°C to 175°C. Key parameters include a maximum gate charge (Qg) of 45.4 nC at 10V and input capacitance (Ciss) of 3510 pF at 30V. This MOSFET is commonly utilized in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 169A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 35A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 175µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 45.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3510 pF @ 30 V |
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