NTBGS1D5N06C
POWER MOSFET, 60 V, 1.62 M?, 267Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTBGS1D5N06C is an N-Channel Power MOSFET designed for high-efficiency power switching applications. Featuring a drain-source voltage (Vdss) of 60 V, this component offers a low on-resistance (Rds On) of 1.55 mOhm at 64 A and 12 V gate drive. The continuous drain current (Id) is rated at 35 A at 25°C ambient and 267 A at 25°C case temperature, with maximum power dissipation of 3.7 W (ambient) and 211 W (case). Key electrical characteristics include a gate charge (Qg) of 78.6 nC at 10 V and input capacitance (Ciss) of 6250 pF at 30 V. The device is housed in a TO-263-7 (D2PAK) surface-mount package, suitable for demanding thermal management. Operating temperature range is -55°C to 175°C. This MOSFET is utilized across various industries including automotive, industrial power supplies, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 267A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55mOhm @ 64A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 211W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 318µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 78.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 30 V |
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