NTBGS001N06C
POWER MOSFET, 60 V, 1.1 M?, 342Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTBGS001N06C is an N-Channel Power MOSFET designed for high-performance applications. Featuring a Drain-to-Source Voltage (Vdss) of 60 V, this component offers a low on-resistance (Rds On) of 1.1 mOhm at 112A and 12V gate drive. It supports continuous drain currents of 42A at 25°C ambient and 342A at 25°C case temperature, with substantial power dissipation capabilities of 3.7W (Ta) and 245W (Tc).
Key electrical characteristics include a maximum gate charge (Qg) of 139 nC at 10V and a maximum input capacitance (Ciss) of 11110 pF at 30V. The NTBGS001N06C is housed in a TO-263-7, D2PAK surface mount package, facilitating efficient thermal management. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for demanding power conversion, automotive, and industrial control systems. The device utilizes MOSFET technology and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Ta), 342A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 112A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 245W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 562µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11110 pF @ 30 V |
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