NTB90N02T4
MOSFET N-CH 24V 90A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB90N02T4 is an N-Channel Power MOSFET designed for high-current applications. This device features a Drain-to-Source Voltage (Vdss) of 24 V and a continuous Drain Current (Id) of 90 A at 25°C. With a low on-resistance (Rds On) of 5.8 mOhm at 90 A and 10 V Vgs, it offers efficient power switching. The NTB90N02T4 is housed in a TO-263-3, D2PAK surface-mount package, facilitating integration into compact designs. Key electrical parameters include a maximum power dissipation of 85 W (Tc), a Gate Charge (Qg) of 29 nC at 4.5 V, and an input capacitance (Ciss) of 2120 pF at 20 V. This component is suitable for automotive and industrial power management systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2120 pF @ 20 V |
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