NTB85N03T4G
MOSFET N-CH 28V 85A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB85N03T4G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 28V and a continuous drain current capability of 85A at 25°C (Tc). With a low on-resistance of 6.8mOhm maximum at 40A and 10V Vgs, it offers efficient power handling, rated for 80W (Tc) power dissipation. The Gate Charge (Qg) is 29 nC maximum at 4.5V, and input capacitance (Ciss) is 2150 pF maximum at 24V. It supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. This MOSFET is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package and is supplied on tape and reel. It finds application in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 28 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 24 V |
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