NTB85N03
MOSFET N-CH 28V 85A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB85N03, an N-Channel MOSFET, features a 28V drain-source voltage and a continuous drain current of 85A at 25°C. With a low on-resistance of 6.8mOhm at 40A and 10V, this component is designed for high-efficiency power switching applications. The NTB85N03 offers a maximum power dissipation of 80W and a gate charge of 29nC at 4.5V, facilitating fast switching speeds. Its input capacitance is rated at 2150pF at 24V. Packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), this MOSFET operates across a temperature range of -55°C to 150°C. It is suitable for use in automotive, industrial power supplies, and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 28 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 24 V |
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