NTB75N06T4G
MOSFET N-CH 60V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB75N06T4G is an N-Channel Power MOSFET designed for demanding power management applications. Featuring a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 75A at 25°C (Ta), this component offers robust performance. Its low on-resistance (Rds On) of 9.5mOhm at 37.5A and 10V gate drive voltage minimizes conduction losses. The device boasts a maximum gate charge (Qg) of 130 nC at 10V and an input capacitance (Ciss) of 4510 pF at 25V, facilitating efficient switching.
Housed in a D2PAK (TO-263-3, D2PAK) surface mount package, the NTB75N06T4G supports high power dissipation, with 2.4W (Ta) and 214W (Tj). The operating temperature range is -55°C to 175°C (TJ). This MOSFET finds application in industries such as automotive, industrial power supplies, and electric vehicle systems, where high current handling and thermal management are critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 214W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4510 pF @ 25 V |
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