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NTB75N06LT4

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NTB75N06LT4

MOSFET N-CH 60V 75A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTB75N06LT4 is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 75A at 25°C, with a maximum on-resistance (Rds On) of 11mOhm at 37.5A and 5V gate drive. The device offers a low gate charge of 92 nC at 5V and an input capacitance (Ciss) of 4370 pF at 25V. With a maximum power dissipation of 2.4W (Ta) and 214W (Tj), it is suitable for demanding thermal environments. The NTB75N06LT4 is packaged in a TO-263-3, D2PAK surface mount configuration and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial power control, and high-efficiency power supply designs.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Ta)
Rds On (Max) @ Id, Vgs11mOhm @ 37.5A, 5V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4370 pF @ 25 V

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