NTB75N06L
MOSFET N-CH 60V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB75N06L is an N-Channel Power MOSFET designed for high-current applications. This device offers a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 75A at 25°C ambient. Featuring a low Rds(on) of 11mOhm at 37.5A and 5V Vgs, it minimizes conduction losses. The device boasts a gate charge (Qg) of 92 nC at 5V and input capacitance (Ciss) of 4370 pF at 25V. With a maximum power dissipation of 2.4W ambient and 214W junction, it is suitable for demanding thermal environments. The TO-263-3, D2PAK package facilitates surface mounting. This component is utilized in power supply, automotive, and industrial control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 37.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 214W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4370 pF @ 25 V |
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