NTB75N06G
MOSFET N-CH 60V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB75N06G is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current capability of 75A at 25°C ambient temperature. With a low on-resistance of 9.5mOhm maximum at 37.5A and 10V gate drive, it minimizes conduction losses. The device is housed in a TO-263-3, D2PAK (TO-263AB) surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 2.4W (Ta) and 214W (Tj). Key electrical parameters include a gate charge of 130 nC (max) at 10V and input capacitance of 4510 pF (max) at 25V. The NTB75N06G is suitable for use in power switching, automotive, and industrial control systems. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 214W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4510 pF @ 25 V |
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