NTB75N03L09T4G
MOSFET N-CH 30V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTB75N03L09T4G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30 V drain-source breakdown voltage and a continuous drain current capability of 75 A at 25°C (Tc). The low on-resistance of 8 mOhm at 37.5 A and 5 V gate drive voltage minimizes conduction losses, while its high power dissipation of 125 W (Tc) ensures thermal reliability in high-current scenarios. Packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), it is supplied on tape and reel for automated assembly. Key parameters include a gate charge of 75 nC at 5 V and input capacitance of 5635 pF at 25 V. This component is suitable for use in automotive, industrial power supplies, and power management systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 37.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5635 pF @ 25 V |
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