NTB75N03L09G
MOSFET N-CH 30V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB75N03L09G is a 30 V N-Channel Power MOSFET in a TO-263-3, D2PAK package. This component offers a continuous drain current of 75 A at 25°C (Tc) and a maximum on-resistance (Rds On) of 8 mOhm at 37.5 A, 5 V. Key electrical characteristics include a drain-source voltage (Vdss) of 30 V, a gate-source voltage (Vgs) range of ±20 V, and a threshold voltage (Vgs(th)) of 2V at 250µA. The device features a gate charge (Qg) of 75 nC at 5 V and input capacitance (Ciss) of 5635 pF at 25 V. Power dissipation is rated at 2.5 W (Ta) and 125 W (Tc). The NTB75N03L09G is suitable for applications in automotive and industrial power management systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 37.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5635 pF @ 25 V |
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