NTB75N03-6G
MOSFET N-CH 30V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB75N03-6G is an N-Channel Power MOSFET designed for demanding power management applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current capability of 75A at 25°C (Tc). With a low on-resistance of 6.5mOhm at 37.5A and 10V Vgs, it minimizes conduction losses. The NTB75N03-6G offers a maximum power dissipation of 125W (Tc) and 2.5W (Ta), supported by a Gate Charge (Qg) of 75 nC at 5V. Its input capacitance (Ciss) is rated at 5635 pF at 25V. The component is housed in a surface-mount D2PAK (TO-263-3) package, suitable for high-density board designs. Operating across a wide temperature range from -55°C to 150°C (TJ), this MOSFET finds application in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5635 pF @ 25 V |
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