NTB65N02RT4G
MOSFET N-CH 25V 7.6A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB65N02RT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a 25V drain-source breakdown voltage and a continuous drain current capability of 7.6A at 25°C (Tc). With a low on-resistance of 8.2mOhm maximum at 30A and 10V Vgs, it ensures efficient power transfer. The NTB65N02RT4G offers a gate charge (Qg) of 9.5 nC maximum at 4.5V, facilitating fast switching performance. Input capacitance (Ciss) is rated at 1330 pF maximum at 20V. The MOSFET is housed in a surface-mount D2PAK (TO-263-3) package, suitable for high-power density designs. Power dissipation is 1.04W (Ta) and 62.5W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in automotive and industrial power switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |