NTB65N02R
MOSFET N-CH 25V 65A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB65N02R is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 65 A at 25°C (Tc). With a low on-resistance (Rds On) of 8.2 mOhm at 30 A and 10 V, it minimizes conduction losses. The gate charge (Qg) is rated at 9.5 nC maximum at 4.5 V, facilitating efficient switching. The device offers a maximum power dissipation of 62.5 W (Tc) and 1.04 W (Ta). It is packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) for robust thermal performance. The NTB65N02R is suitable for use in power supply units, automotive electronics, and industrial motor control systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
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