NTB6448ANT4G
MOSFET N-CH 100V 80A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB6448ANT4G is an N-Channel Power MOSFET designed for high-current applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 13mOhm at 76A and 10V Vgs, it minimizes conduction losses. The MOSFET utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK package for efficient surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 120 nC at 10V and an Input Capacitance (Ciss) of 4500 pF at 25V. This component is suitable for demanding applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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