NTB6412ANT4G
MOSFET N-CH 100V 58A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB6412ANT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 58 A at 25°C (Tc). The low on-resistance of 18.2 mOhm at 58 A and 10 V gate drive, combined with a maximum power dissipation of 167 W (Tc), makes it suitable for high-power switching. Key parameters include a gate charge (Qg) of 100 nC at 10 V and input capacitance (Ciss) of 3500 pF at 25 V. The NTB6412ANT4G is housed in a TO-263-3, D2PAK surface-mount package and operates across a wide temperature range of -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power control, and high-efficiency power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 18.2mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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