NTB6412ANG
MOSFET N-CH 100V 58A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTB6412ANG is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 58 A at 25°C (Tc), with a maximum power dissipation of 167 W (Tc). The Rds(On) is specified at a maximum of 18.2 mOhm at 58 A and 10 V gate drive. Key characteristics include a gate charge (Qg) of 100 nC at 10 V and input capacitance (Ciss) of 3500 pF at 25 V. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. This component is suitable for use in automotive and industrial power control systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 18.2mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
