NTB6411ANT4G
MOSFET N-CH 100V 77A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB6411ANT4G is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 77 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 14 mOhm maximum at 72 A and 10 V gate drive. With a maximum power dissipation of 217 W (Tc), the NTB6411ANT4G is suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 100 nC at 10 V and input capacitance (Ciss) of 3700 pF at 25 V. The MOSFET operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, supplied on tape and reel. This component finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 72A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 217W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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