NTB6410ANG
MOSFET N-CH 100V 76A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB6410ANG is a N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 76A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 13mOhm at 76A and 10V gate drive, with a maximum power dissipation of 188W (Tc). The NTB6410ANG utilizes Metal Oxide technology and is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package, ideal for demanding thermal management. Key electrical characteristics include a Gate Charge (Qg) of 120 nC at 10V and Input Capacitance (Ciss) of 4500 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial power supplies, automotive applications, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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