NTB60N06LT4G
MOSFET N-CH 60V 60A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB60N06LT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current capability of 60A at 25°C ambient. With a low on-resistance of 16mOhm at 30A and 5V gate drive, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 65 nC maximum at 5V and input capacitance (Ciss) of 3075 pF maximum at 25V. Mounted in a surface-mount D2PAK package (TO-263-3, D2PAK), it offers a power dissipation of 2.4W ambient or 150W junction. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in power management, automotive, and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 30A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 150W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3075 pF @ 25 V |
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