NTB60N06LT4
MOSFET N-CH 60V 60A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB60N06LT4 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and supports a continuous Drain Current (Id) of 60A at 25°C (Ta). With a low on-resistance (Rds On) of 16mOhm maximum at 30A and 5V gate drive, it minimizes conduction losses. The NTB60N06LT4 offers a typical Gate Charge (Qg) of 65 nC at 5V and an input capacitance (Ciss) of 3075 pF at 25V. Power dissipation capabilities are rated at 2.4W (Ta) and 150W (Tj). The component is housed in a TO-263-3, D2PAK surface-mount package for efficient thermal management. This MOSFET is suitable for use in power management, automotive, and industrial systems. It operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 30A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 150W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3075 pF @ 25 V |
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