NTB60N06G
MOSFET N-CH 60V 60A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB60N06G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 60A at 25°C. With a low on-resistance (Rds On) of 14mOhm maximum at 30A and 10V Vgs, it minimizes conduction losses. The device offers a maximum Gate Charge (Qg) of 81 nC and an input capacitance (Ciss) of 3220 pF, facilitating efficient switching. It supports a Vgs(th) of 4V at 250µA and a maximum Vgs of ±20V. The NTB60N06G is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount configuration, ideal for high-power density designs. It operates within a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial power control, and high-current switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 150W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V |
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