NTB5860NLT4G
POWER MOSFET 60V 169A 3.0 MOHM SManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB5860NLT4G is a N-Channel Power MOSFET designed for high-current, low-voltage applications. This component features a low on-resistance of 3.0 mO at a VGS of 10V, enabling efficient power delivery. With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of 169A, it is well-suited for demanding power management tasks. The NTB5860NLT4G is manufactured using onsemi's advanced planar stripe, DMOS technology, ensuring robust performance and reliability. Its high power density and low thermal resistance make it an ideal choice for applications in automotive, industrial power supplies, and electric vehicle systems. The component is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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