NTB5605PT4G
MOSFET P-CH 60V 18.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB5605PT4G is a P-Channel Power MOSFET designed for applications requiring efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 18.5A at 25°C ambient. The Rds On (Max) is specified at 140mOhm when driven at 5V with a drain current of 8.5A. It offers a maximum power dissipation of 88W at 25°C case temperature. The device utilizes a D2PAK (TO-263-3) surface mount package, facilitating integration into various electronic designs. Key parameters include a gate charge of 22 nC and input capacitance of 1190 pF, both specified at 5V and 25V respectively. Operating temperature ranges from -55°C to 175°C. Its specifications make it suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 8.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 25 V |
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