NTB5605PG
MOSFET P-CH 60V 18.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB5605PG is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 18.5A at 25°C. With a maximum Rds(on) of 140mOhm at 8.5A and 5V gate drive, it offers efficient power switching. The device is housed in a TO-263-3, D2PAK surface mount package, providing robust thermal performance with a maximum power dissipation of 88W (Tc). Key electrical parameters include a gate charge (Qg) of 22nC at 5V and input capacitance (Ciss) of 1190pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 8.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 25 V |
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