NTB5426NT4G
MOSFET N-CH 60V 120A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB5426NT4G is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C, with a maximum power dissipation of 215W (Tc). Its ultra-low on-resistance (Rds On) of 6mOhm at 60A and 10V gate drive ensures efficient power transfer. The NTB5426NT4G boasts a gate charge (Qg) of 170 nC at 10V and an input capacitance (Ciss) of 5800 pF at 25V. Manufactured using advanced MOSFET technology, this component is housed in a TO-263-3, D2PAK surface mount package, suitable for automated assembly. Key specifications include a ±20V gate-source voltage (Vgs max) and a threshold voltage (Vgs(th) max) of 4V at 250µA. It operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly utilized in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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