NTB5412NT4G
MOSFET N-CH 60V 60A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB5412NT4G is an N-Channel Power MOSFET designed for demanding applications. This TO-263-3, D2PAK packaged component features a Drain to Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 60A at 25°C (Tc). With a low on-resistance of 14mOhm at 30A and 10V, it offers efficient power handling with a maximum power dissipation of 125W (Tc). The device supports a gate drive voltage of 10V for optimal Rds On performance and has a maximum gate-source voltage of ±20V. Key parameters include an input capacitance (Ciss) of 3220pF at 25V and a gate charge (Qg) of 85nC. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in power supply, automotive, and industrial applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 0 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V |
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