NTB5411NT4G
MOSFET N-CH 60V 80A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB5411NT4G is an N-Channel Power MOSFET designed for demanding power applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and supports a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 166W (Tc). The low on-resistance (Rds On) of 10mOhm at 40A and 10V drive voltage, coupled with a gate charge (Qg) of 130 nC at 10V, ensures efficient switching performance. Its input capacitance (Ciss) is rated at 4500 pF at 25V and it operates within a temperature range of -55°C to 175°C (TJ). Packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), this MOSFET is suitable for automotive, industrial power supply, and motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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