NTB5405NT4G
MOSFET N-CH 40V 116A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB5405NT4G is an N-Channel Power MOSFET designed for high-current applications. This device features a 40 V drain-source voltage and a continuous drain current of 116 A at 25°C (Tc). With a low on-resistance of 5.8 mOhm maximum at 40 A and 10 V, it minimizes conduction losses. The MOSFET offers a maximum gate charge of 88 nC at 10 V and an input capacitance of 4000 pF at 32 V. It is housed in a surface-mount D2PAK (TO-263-3, D2PAK) package, suitable for efficient thermal management with power dissipation capabilities of 3 W (Ta) and 150 W (Tc). The operating temperature range is -55°C to 175°C (TJ). This component is utilized in power supply designs, automotive applications, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 32 V |
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