NTB5405NG
MOSFET N-CH 40V 116A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB5405NG is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 116A at 25°C (Tc). Its low on-resistance (Rds On) of 5.8mOhm maximum at 40A and 10V gate-source voltage (Vgs) ensures efficient power handling. The NTB5405NG offers a maximum gate charge (Qg) of 88 nC at 10V and an input capacitance (Ciss) of 4000 pF maximum at 32V. With a power dissipation capability of 150W at 25°C (Tc) and 3W at 25°C (Ta), it is suitable for high-power switching applications. This component is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, facilitating surface mounting. The operating temperature range is from -55°C to 175°C (TJ). Applications include power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 32 V |
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