NTB5404NT4G
MOSFET N-CH 40V 167A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB5404NT4G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current capability of 167A at 25°C (Tc). With a low on-resistance of 4.5mOhm at 40A and 10V, it minimizes conduction losses. The device offers a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a gate charge (Qg) of 125 nC at 10V and input capacitance (Ciss) of 7000 pF at 32V. It supports drive voltages between 5V and 10V for optimal Rds(on) performance. The NTB5404NT4G is housed in a TO-263-3, D2PAK package for surface mounting and has a maximum junction temperature of 175°C. Power dissipation is rated at 5.4W (Ta) and 254W (Tc). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 167A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 254W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 32 V |
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