NTB52N10T4G
MOSFET N-CH 100V 52A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB52N10T4G is an N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 52A at 25°C (Tc). With a low on-resistance of 30mOhm maximum at 26A and 10V gate drive, it minimizes conduction losses. The MOSFET offers a maximum gate charge of 135 nC at 10V and an input capacitance of 3150 pF (max) at 25V. Power dissipation is rated at 2W (Ta) and 178W (Tc). Packaged in a TO-263-3, D2PAK (TO-263AB) for surface mounting, the NTB52N10T4G operates within a temperature range of -55°C to 150°C. This component is suitable for use in power conversion, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 178W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
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