NTB52N10G
MOSFET N-CH 100V 52A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB52N10G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current capability of 52A (Tc) at 25°C. The NTB52N10G exhibits a low on-resistance of 30mOhm maximum at 26A and 10V gate drive, contributing to reduced conduction losses. Key parameters include a gate charge (Qg) of 135 nC maximum at 10V and an input capacitance (Ciss) of 3150 pF maximum at 25V. With a maximum power dissipation of 178W (Tc), this MOSFET is suitable for demanding thermal environments. The device is housed in a TO-263-3, D2PAK package, facilitating surface mounting. It operates across a temperature range of -55°C to 150°C (TJ). The NTB52N10G finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 178W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
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