NTB45N06T4G
MOSFET N-CH 60V 45A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTB45N06T4G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 45A at 25°C. With a low on-resistance (Rds On) of 26mOhm at 22.5A and 10V, it minimizes conduction losses. The device offers a gate charge (Qg) of 46 nC at 10V and an input capacitance (Ciss) of 1725 pF at 25V.
The NTB45N06T4G is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management with a maximum power dissipation of 2.4W (Ta) and 125W (Tj). Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and general-purpose power switching applications across various industrial sectors. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 125W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
