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NTB45N06LT4

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NTB45N06LT4

MOSFET N-CH 60V 45A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTB45N06LT4 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current rating of 45 A at 25°C (Ta). With a maximum Rds(On) of 28 mOhm at 22.5 A and 5 V gate drive, it offers efficient switching. The NTB45N06LT4 utilizes advanced MOSFET technology and is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 32 nC at 5 V and input capacitance (Ciss) of 1700 pF at 25 V. Power dissipation is rated at 2.4 W (Ta) and 125 W (Tj). This component is commonly found in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Ta)
Rds On (Max) @ Id, Vgs28mOhm @ 22.5A, 5V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 125W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 25 V

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