NTB45N06LG
MOSFET N-CH 60V 45A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTB45N06LG is a high-performance N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 45A at 25°C. This device features a low on-resistance (Rds On) of 28mOhm at 22.5A and 5V, suitable for applications requiring efficient power switching. The Gate Charge (Qg) is a maximum of 32 nC at 5V, and the input capacitance (Ciss) is 1700 pF at 25V. With a maximum power dissipation of 2.4W (Ta) and 125W (Tj), it is designed for demanding thermal environments. The NTB45N06LG is housed in a TO-263-3, D2PAK surface mount package, facilitating high-density board designs. It operates across a wide temperature range from -55°C to 175°C. This component finds application in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 22.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 125W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
