NTB45N06G
MOSFET N-CH 60V 45A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB45N06G is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 45A at 25°C (Ta). With a low on-resistance of 26mOhm at 22.5A and 10V Vgs, it minimizes conduction losses. The NTB45N06G is housed in a TO-263-3, D2PAK surface mount package, offering robust thermal performance with a maximum power dissipation of 2.4W (Ta) and 125W (Tj). Key parameters include a gate charge (Qg) of 46nC @ 10V and input capacitance (Ciss) of 1725pF @ 25V, ensuring efficient switching characteristics. It operates across a wide temperature range from -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V. This component is commonly utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 125W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |
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