NTB4302T4G
MOSFET N-CH 30V 74A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB4302T4G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 74A at 25°C, with a maximum power dissipation of 80W (Tc). Its low on-resistance of 9.3mOhm at 37A and 10V (Vgs) is achieved with a 4.5V gate drive, crucial for efficient switching. The NTB4302T4G offers a gate charge (Qg) of 28 nC at 4.5V and input capacitance (Ciss) of 2400 pF at 24V. Packaged in a TO-263-3, D2PAK surface mount configuration, this component is suitable for high-power switching, power management, and automotive applications. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 24 V |
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