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NTB4302T4

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NTB4302T4

MOSFET N-CH 30V 74A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTB4302T4 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 74 A at 25°C (Tc), with a maximum power dissipation of 80 W (Tc). The NTB4302T4 offers a low on-resistance (Rds On) of 9.3 mOhm at 37 A and 10 V, and a gate charge (Qg) of 28 nC at 4.5 V. It operates with a gate-source voltage (Vgs) range of ±20 V and requires a drive voltage between 4.5 V and 10 V. The input capacitance (Ciss) is rated at a maximum of 2400 pF at 24 V. Packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration, this MOSFET is suitable for use in automotive, industrial, and power supply applications. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C74A (Tc)
Rds On (Max) @ Id, Vgs9.3mOhm @ 37A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 24 V

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