NTB4302G
MOSFET N-CH 30V 74A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTB4302G is an N-Channel MOSFET designed for demanding power applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 74A at 25°C (Tc), with a maximum power dissipation of 80W (Tc). The low on-resistance of 9.3mOhm is achieved at 37A and 10V Vgs, indicating efficient power transfer. Gate drive is optimized with a gate charge of 28nC at 4.5V and input capacitance of 2400pF at 24V. The device supports a wide gate-source voltage range of ±20V and a threshold voltage of 3V at 250µA. Mounted in a TO-263-3, D2PAK package, the NTB4302G is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in industrial, automotive, and power supply sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 24 V |
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