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NTB35N15T4G

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NTB35N15T4G

MOSFET N-CH 150V 37A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTB35N15T4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 37A at 25°C. With a maximum on-resistance (Rds On) of 50mOhm at 18.5A and 10V gate drive, it offers efficient power handling. The device supports a gate drive voltage of 10V and has a maximum gate-source voltage of ±20V. Key parameters include a gate charge (Qg) of 100 nC @ 10V and an input capacitance (Ciss) of 3200 pF @ 25V. The NTB35N15T4G has a power dissipation capability of 2W (Ta) and 178W (Tj), with an operating junction temperature range of -55°C to 150°C. It is housed in a TO-263-3, D2PAK package, suitable for surface mounting, and supplied on tape and reel. This MOSFET is utilized in various industries including automotive and industrial power systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C37A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 18.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 178W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 25 V

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