NTB35N15G
MOSFET N-CH 150V 37A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTB35N15G is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a Drain-to-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 37 A at 25°C. With a maximum On-Resistance (Rds On) of 50 mOhm at 18.5 A and 10 V gate drive, it offers excellent conduction characteristics. The device boasts a typical Gate Charge (Qg) of 100 nC at 10 V and an input capacitance (Ciss) of 3200 pF at 25 V. It is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount package, suitable for demanding thermal management with a maximum power dissipation of 2 W (Ta) and 178 W (Tj). The NTB35N15G operates across a wide temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±20V. This MOSFET is commonly utilized in power supply designs, automotive electronics, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 18.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 178W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |
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